Optical properties of silicon nanopillars with a built-in vertical p-n-junction

Optical properties of silicon nanopillars with a built-in vertical p-n-junction Научная публикация

Журнал

Semiconductors
ISSN: 1063-7826

Вых. Данные

Год: 2022, Том: 56, Номер: 3, Страницы: 227-234 Страниц : 8 DOI: 10.21883/sc.2022.03.53067.9761

Авторы

Basalaeva L.S. ¹ , Tsarev A.V. ^2,1 , Anikin K.V. ¹ , Veber S.L. ^3,2 , Kryzhanovskaya N.V. ⁴ , Nastaushev Yu.V. ¹

Организации

1	Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2	Novosibirsk State University, Novosibirsk, Russia
3	International Tomography Center, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
4	Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch. Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.

Basalaeva L.S. , Tsarev A.V. , Anikin K.V. , Veber S.L. , Kryzhanovskaya N.V. , Nastaushev Y.V.
Optical properties of silicon nanopillars with a built-in vertical p-n-junction
Semiconductors. 2022. V.56. N3. P.227-234. DOI: 10.21883/sc.2022.03.53067.9761 OpenAlex

Басалаева Л.С. , Царев А.В. , Аникин К.В. , Вебер С.Л. , Крыжановская Н.В. , Настаушев Ю.В.
Оптические свойства кремниевых нанопилларов со встроенным вертикальным p-n-переходом
Физика и техника полупроводников. 2022. Т.56. №3. С.340-348. DOI: 10.21883/FTP.2022.03.52121.9761

Поступила в редакцию:	10 нояб. 2021 г.
Принята к публикации:	20 нояб. 2021 г.

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